Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells

Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells

Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells.

The in-plane effective electron mass (m i) in narrow Ga0.47In0.53As/InP quantum wells is strongly dependent on the quantization energy. Cyclotron resonance in a series of quantum wells with well widths down to 15 Å reveals a mass enhancement of up to 50% (m i50.065m0) over the bulk value of Ga0.47In0.53As. This effect is caused by the nonparabolicity of the conduction band and wave function pen...

Hole effective mass in remote doped Si/Si12xGex quantum wells with 0.05<x<0.3

Valence band states in diamond p-delta-doped quantum wells

The hole energy structure in boron delta-doped diamond is studied with the use of the 6 × 6 k · p Hamiltonian. The approach starts with a Thomas-Fermi-based description of the heavy, light and split-off hole states at the Brillouin zone center, and is extended to k 6= 0 points by using the obtained Γ-point solutions as a basis for the diagonalization that leads to the energy vs k relations corr...

Effective Mass and Valence-band Structure in GaxIn1−xAs/InP and GaxIn1−xP/AlGaInP Quantum Wells

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